a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982-1200 fax (818) 765-3004 1/1 specifications are subject to change without characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 50 ma 36 v bv ces i c = 100 ma 36 v bv ceo i c = 50 ma 18 v bv ebo i e = 10 ma 3.5 v i ces v ce = 15 v 10 ma h fe v ce = 5.0 v i c = 5.0 a 10 --- --- c ob v cb = 12.5 v f = 1.0 mhz 300 pf g p h h c v ce = 12.5 v p in = 7.0 w f = 50 mhz p out = 50 w (pep) 10 55 db % npn silicon rf power transistor HF50-12F description: the asi HF50-12F is designed for features: p g = 16 db min. at 50 w/30 mhz imd 3 = -30 dbc max. at 30 w (pep) omnigold ? metalization system maximum ratings i c 12.0 a v cbo 36 v v ceo 18 v v ebo 3.5 v p diss 183 w @ t c = 25 o c t j -65 o c to +200 o c t stg -65 o c to +150 o c q q jc 1.05 o c/w package style .380 4l flg order code: asi10596 minimum inches / mm .970 / 24.64 b c d e f g a maximum .385 / 9.78 .980 / 24.89 inches / mm h .160 / 4.06 .180 / 4.57 dim .220 / 5.59 .230 / 5.84 .105 / 2.67 .085 / 2.16 i j .240 / 6.10 .255 / 6.48 .785 / 19.94 f b g .125 ?.125 nom. full r d e c h .112 x 45 a i j .004 / 0.10 .006 / 0.15 .280 / 7.11 .720 / 18.29 .730 / 18.54 e e c b
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